Selective MOCVD epitaxy for optoelectronic devices

Integrated circuits require the monolithic integration of injection laser sources with a fabrication process which must be compatible with the integration of the other devices. In particular, the problem of producing mirror faces without the usual cleaving process must be solved. Mirrors formed by chemical etching or selective vapor epitaxy by the chloride process have already been reported. We examine in this paper the possibility of growing a GaAs-GaAlAs integrated laser by selective epitaxy in a MOCVD apparatus. To this end, we have grown monolayers and double heterostructures through a SiO 2 mask deposited along the [110] and [1 1 0] directions. Vertical planes have been obtained with epitaxy made on a specially preshaped substrate.