Preparation of amorphous layers of Ge4Se5Te and their electrical properties

The preparation of thin amorphous films of composition Ge4Se5Te by free evaporation of the glass Ge35.1Se54.5Te10.4 (mol.%) in vacuo is reported. Their homogeneity is shown by chemical analyses. The composition of the layers is independent of the thickness. The reproducibility of the current voltage characteristics for layers from different evaporation cycles as well as for different contact materials is established. In every case symmetric curves can be observed. The current voltage characteristics are independent of film thickness within the limits of standard deviation of the measurements. 7 ref.--AA