Plasmon reflectivity of n-type ferromagnetic semiconductor HgCr2Se4

Plasmon reflectivity of n-type ferromagnetic semiconductor HgCr2Se4

The reflectivity of n-type HgCr2Se4 was measured between 86 and 320 deg K for photon wavenumbers from 250 to 1000/cm-1. A critical behaviour of the plasmon parameters (plasmon energy and plasmon scattering energy) was observed at about 160 deg K but not in the vicinity of the Curie temperature Tc=11...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Solid state communications 1980-02, Vol.33 (8), p.889-893
Hauptverfasser: Selmi, A., le Toullec, R., Gibart, P.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The reflectivity of n-type HgCr2Se4 was measured between 86 and 320 deg K for photon wavenumbers from 250 to 1000/cm-1. A critical behaviour of the plasmon parameters (plasmon energy and plasmon scattering energy) was observed at about 160 deg K but not in the vicinity of the Curie temperature Tc=110 deg K. The effective mass and the optical mobility exhibit a rapid variation between 150 and 170 deg K. 8 ref.--AA
ISSN:0038-1098
DOI:10.1016/0038-1098(80)91211-9