Recoil oxygen implants and thermal redistribution of oxygen in through-oxide arsenic-implanted Si

Recoil oxygen implants and thermal redistribution of oxygen in through-oxide arsenic-implanted Si

The redistribution of recoil oxygen implants produced by the implantation of As ions through oxide layers on Si substrates has been investigated at annealing temperatures in the range 4000–1000 °C. Using transmission electron microscopy and secondary ion mass spectrometry profiling, it has been show...

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Veröffentlicht in:Applied physics letters 1981-10, Vol.39 (7), p.564-566
Hauptverfasser: Magee, T. J., Leung, C., Kawayoshi, H., Palkuti, L. J., Furman, B. K., Evans, C. A., Christel, L. A., Gibbons, J. F., Day, D. S.
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Sprache:eng
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Zusammenfassung:The redistribution of recoil oxygen implants produced by the implantation of As ions through oxide layers on Si substrates has been investigated at annealing temperatures in the range 4000–1000 °C. Using transmission electron microscopy and secondary ion mass spectrometry profiling, it has been shown that the implanted (recoil) oxygen is rapidly gettered into residual damage structure at anneal temperatures
ISSN:0003-6951
1077-3118
DOI:10.1063/1.92795