Non-linear electrical effect in graded-electron concentration silicon
A gradient of carrier concentration in semiconductors can create a double-frequency internal electric field which is parallel to this gradient and perpendicular to the applied a.c. field. This warm-carrier effect was measured in silicon specimens with a gradient of electron concentration, at 77 and...
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Veröffentlicht in: | Solid state communications 1980-01, Vol.36 (9), p.773-776 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A gradient of carrier concentration in semiconductors can create a double-frequency internal electric field which is parallel to this gradient and perpendicular to the applied a.c. field. This warm-carrier effect was measured in silicon specimens with a gradient of electron concentration, at 77 and 300 K, under applied fields from 1 to 10 V m
-1 and within the frequency range of 0.3–20 kHz. A comparison between experimental data and a theoretical model is discussed. |
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ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/0038-1098(80)90009-5 |