Non-linear electrical effect in graded-electron concentration silicon

A gradient of carrier concentration in semiconductors can create a double-frequency internal electric field which is parallel to this gradient and perpendicular to the applied a.c. field. This warm-carrier effect was measured in silicon specimens with a gradient of electron concentration, at 77 and...

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Veröffentlicht in:Solid state communications 1980-01, Vol.36 (9), p.773-776
Hauptverfasser: Kaczmarski, K., Pawlikowski, J.M.
Format: Artikel
Sprache:eng
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Zusammenfassung:A gradient of carrier concentration in semiconductors can create a double-frequency internal electric field which is parallel to this gradient and perpendicular to the applied a.c. field. This warm-carrier effect was measured in silicon specimens with a gradient of electron concentration, at 77 and 300 K, under applied fields from 1 to 10 V m -1 and within the frequency range of 0.3–20 kHz. A comparison between experimental data and a theoretical model is discussed.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(80)90009-5