Incorporation of boron during the growth of GaAs single crystals

Incorporation of boron during the growth of GaAs single crystals

A study of GaAs prepared by conventional Bridgman techniques and by liquid-encapsulated Czochralski methods reveals that only small amounts of boron are incorporated from the boric oxide encapsulant. When a pyrolytic boron nitride crucible is used, there is a 100-fold increase in the amount of incor...

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Veröffentlicht in:Applied physics letters 1980-06, Vol.36 (12), p.989-990
Hauptverfasser: Hopkins, C. G., Deline, V. R., Blattner, R. J., Evans, C. A., Magee, T. J.
Format: Artikel
Sprache:eng
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Zusammenfassung:A study of GaAs prepared by conventional Bridgman techniques and by liquid-encapsulated Czochralski methods reveals that only small amounts of boron are incorporated from the boric oxide encapsulant. When a pyrolytic boron nitride crucible is used, there is a 100-fold increase in the amount of incorporated boron, suggesting some decomposition of the boron nitride.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.91393