Low-temperature redistribution of Cr in boron-implanted GaAs in the absence of encapsulant stress

Motion and gettering of Cr into damage regions of B-implanted GaAs samples has been investigated using transmission electron microscopy and secondary-ion mass spectrometry profiling. In the absence of an encapsulant layer, redistribution and gettering of Cr has been detected within the implanted region after annealing at temperatures from 300 to 600° C. The observed gettering behavior can be correlated with the development of damage in the form of dislocation loops of 50 Å average image diameter. The motion of Cr into damage produces sharply defined zones of Cr depletion which appear stable at 600° C.