Low-temperature epitaxial regrowth of ion-implanted amorphous GaAs

Low-temperature epitaxial regrowth of ion-implanted amorphous GaAs

Glancing-angle Rutherford backscattering and channeling techniques have been used to investigate the regrowth of Ar+-ion-implanted amorphous layers on (100) GaAs. Under carefully controlled implant conditions, amorphous GaAs layers can be recrystallized epitaxially at temperatures below 250 °C. Howe...

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Veröffentlicht in:Applied physics letters 1980-06, Vol.36 (12), p.994-996
Hauptverfasser: Williams, J. S., Austin, M. W.
Format: Artikel
Sprache:eng
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Zusammenfassung:Glancing-angle Rutherford backscattering and channeling techniques have been used to investigate the regrowth of Ar+-ion-implanted amorphous layers on (100) GaAs. Under carefully controlled implant conditions, amorphous GaAs layers can be recrystallized epitaxially at temperatures below 250 °C. However, the regrowth process is complex, with the crystalline quality and regrowth rate most dependent on implant dose.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.91656