Electron beam modulation of GaAs metal-semiconductor field-effect transistors

Electron beam modulation of GaAs metal-semiconductor field-effect transistors

Modulation of the surface potential of GaAs Schottky barrier field-effect transistors by 1–6-kV electrons with current densities in the range between 10−5 and 10−3 A/cm2 can produce current gains G⩾105 for electron beam currents pulsed at rates ⩽104 Hz.

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Veröffentlicht in:Applied physics letters 1980-11, Vol.37 (10), p.943-945
Hauptverfasser: Wieder, H. H., Davis, N. M., Flesner, L. D.
Format: Artikel
Sprache:eng
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Zusammenfassung:Modulation of the surface potential of GaAs Schottky barrier field-effect transistors by 1–6-kV electrons with current densities in the range between 10−5 and 10−3 A/cm2 can produce current gains G⩾105 for electron beam currents pulsed at rates ⩽104 Hz.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.91769