On light-induced effect in amorphous hydrogenated silicon

Amorphous silicon films prepared by a discharge of 10% SiH4-90% H2 mixture are shown to have properties comparable to those prepared from 100% SiH4. These films are found to be quite stable against prolonged light exposure.

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Bibliographische Detailangaben
Veröffentlicht in:	J. Appl. Phys.; (United States) 1981-02, Vol.52 (2), p.859-860
Hauptverfasser:	Guha, S., Narasimhan, K. L., Pietruszko, S. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	AMORPHOUS STATE CHEMICAL REACTIONS COMPARATIVE EVALUATIONS DISPERSIONS ELECTRIC DISCHARGES ELECTROMAGNETIC RADIATION ELEMENTS HYDRIDES HYDROGEN HYDROGEN COMPOUNDS HYDROGENATION MATERIALS MATERIALS SCIENCE MIXTURES NONMETALS PHYSICAL RADIATION EFFECTS RADIATION EFFECTS RADIATIONS SEMICONDUCTOR MATERIALS SEMIMETALS SILANES SILICON SILICON COMPOUNDS 360605 > Materials-- Radiation Effects VISIBLE RADIATION
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Beschreibung
Zusammenfassung:	Amorphous silicon films prepared by a discharge of 10% SiH4-90% H2 mixture are shown to have properties comparable to those prepared from 100% SiH4. These films are found to be quite stable against prolonged light exposure.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.328849