Design windows for low-high-low GaAs IMPATT's

Design windows for low-high-low GaAs IMPATT's

An idealized device model is employed to determine the optimum material parameters for low-high-low (LHL) GaAs IMPATT's. Experimental efficiencies of 15-GHz devices indicate the model is of considerable utility for LHL GaAs IMPATT design.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 1980-01, Vol.27 (1), p.282-286
Hauptverfasser: Namordi, M.R., Coleman, D.J.
Format: Artikel
Sprache:eng
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Zusammenfassung:An idealized device model is employed to determine the optimum material parameters for low-high-low (LHL) GaAs IMPATT's. Experimental efficiencies of 15-GHz devices indicate the model is of considerable utility for LHL GaAs IMPATT design.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1980.19851