Light scattering from optically excited electron-hole plasmas in GaAs
We report Raman spectra of intrinsic electron-hole excitations in a direct gap semiconductor. Near the E 0+ Δ 0 Raman resonance we observe single particle scattering as well as scattering from damped plasmon-LO phonon modes. Under non-resonant conditions only the latter process is observed. The maxi...
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| Veröffentlicht in: | Solid state communications 1981-07, Vol.39 (1), p.23-26 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | We report Raman spectra of intrinsic electron-hole excitations in a direct gap semiconductor. Near the E
0+
Δ
0 Raman resonance we observe single particle scattering as well as scattering from damped
plasmon-LO phonon modes. Under non-resonant conditions only the latter process is observed. The maximum carrier densities in the electron-hole plasma derived from these measurements are in the range of 2.8
to 3.2·10
17
cm
-3 at a carrier temperature of 102 K and 115 K, respectively. |
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| ISSN: | 0038-1098 1879-2766 |
| DOI: | 10.1016/0038-1098(81)91039-5 |