Light-induced dangling bonds in hydrogenated amorphous silicon

Light-induced dangling bonds in hydrogenated amorphous silicon

After intensive and long illumination of undoped a-Si:H samples the dark ESR signal is considerably enhanced. The g value of 2.0055 and the linewidth DHpp = 6–7 G leads to the conclusion that the light-induced defects are single dangling bonds. They disappear again by thermal anneal at about 220 °C....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1981-03, Vol.38 (6), p.456-458
Hauptverfasser: Dersch, H., Stuke, J., Beichler, J.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:After intensive and long illumination of undoped a-Si:H samples the dark ESR signal is considerably enhanced. The g value of 2.0055 and the linewidth DHpp = 6–7 G leads to the conclusion that the light-induced defects are single dangling bonds. They disappear again by thermal anneal at about 220 °C.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.92402