Capless Annealing of Ion‐Implanted Gallium Arsenide by a Melt‐Controlled Ambient Technique

A novel capless technique for the annealing of ion-implanted GaAs is described. The apparatus employed consists of a large solution of GaAs in Ga, into which is immersed a suitable sample holder containing the wafer to be annealed. Selenium-implanted layers annealed using this technique behave electrically in the manner expected for well-annealed group VI dopant implants into GaAs. The electrical activity of implanted Si, however, decreases with increasing anneal temp. in the range from 800-900 deg C. Possible explanations for the behavior of the implanted Si are discussed.18 refs.--AA