Electrical measurement of the junction temperature of an RF power transistor

An enhanced electrical method is presented for measuring the average junction temperature of an RF bipolar transistor. A two-step procedure, previously developed for DC operation, is extended to include the junction temperature measurement for an RF power transistor in a tuned amplifier circuit. The...

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Veröffentlicht in:	IEEE transactions on instrumentation and measurement 1992-10, Vol.41 (5), p.663-665
Hauptverfasser:	Cain, B.M., Goud, P.A., Englefield, C.G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bipolar transistors Electric variables measurement Electronics Exact sciences and technology Operational amplifiers Power amplifiers Power measurement Power transistors Radio frequency Radiofrequency amplifiers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature measurement Transistors Tuned circuits
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