Electrical measurement of the junction temperature of an RF power transistor

Electrical measurement of the junction temperature of an RF power transistor

An enhanced electrical method is presented for measuring the average junction temperature of an RF bipolar transistor. A two-step procedure, previously developed for DC operation, is extended to include the junction temperature measurement for an RF power transistor in a tuned amplifier circuit. The...

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Veröffentlicht in:IEEE transactions on instrumentation and measurement 1992-10, Vol.41 (5), p.663-665
Hauptverfasser: Cain, B.M., Goud, P.A., Englefield, C.G.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Bipolar transistors
Electric variables measurement
Electronics
Exact sciences and technology
Operational amplifiers
Power amplifiers
Power measurement
Power transistors
Radio frequency
Radiofrequency amplifiers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature measurement
Transistors
Tuned circuits
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Beschreibung
Zusammenfassung:An enhanced electrical method is presented for measuring the average junction temperature of an RF bipolar transistor. A two-step procedure, previously developed for DC operation, is extended to include the junction temperature measurement for an RF power transistor in a tuned amplifier circuit. The measurement technique is convenient, since it can be used with normal, packaged devices, and does not require a complex heat flow model or ambient temperature measurements.< >
ISSN:0018-9456
1557-9662
DOI:10.1109/19.177339