Electrical measurement of the junction temperature of an RF power transistor
An enhanced electrical method is presented for measuring the average junction temperature of an RF bipolar transistor. A two-step procedure, previously developed for DC operation, is extended to include the junction temperature measurement for an RF power transistor in a tuned amplifier circuit. The...
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| Veröffentlicht in: | IEEE transactions on instrumentation and measurement 1992-10, Vol.41 (5), p.663-665 |
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| container_end_page | 665 |
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| container_issue | 5 |
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| container_title | IEEE transactions on instrumentation and measurement |
| container_volume | 41 |
| creator | Cain, B.M. Goud, P.A. Englefield, C.G. |
| description | An enhanced electrical method is presented for measuring the average junction temperature of an RF bipolar transistor. A two-step procedure, previously developed for DC operation, is extended to include the junction temperature measurement for an RF power transistor in a tuned amplifier circuit. The measurement technique is convenient, since it can be used with normal, packaged devices, and does not require a complex heat flow model or ambient temperature measurements.< > |
| doi_str_mv | 10.1109/19.177339 |
| format | Article |
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A two-step procedure, previously developed for DC operation, is extended to include the junction temperature measurement for an RF power transistor in a tuned amplifier circuit. The measurement technique is convenient, since it can be used with normal, packaged devices, and does not require a complex heat flow model or ambient temperature measurements.< ></description><identifier>ISSN: 0018-9456</identifier><identifier>EISSN: 1557-9662</identifier><identifier>DOI: 10.1109/19.177339</identifier><identifier>CODEN: IEIMAO</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Bipolar transistors ; Electric variables measurement ; Electronics ; Exact sciences and technology ; Operational amplifiers ; Power amplifiers ; Power measurement ; Power transistors ; Radio frequency ; Radiofrequency amplifiers ; Semiconductor electronics. Microelectronics. Optoelectronics. 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A two-step procedure, previously developed for DC operation, is extended to include the junction temperature measurement for an RF power transistor in a tuned amplifier circuit. The measurement technique is convenient, since it can be used with normal, packaged devices, and does not require a complex heat flow model or ambient temperature measurements.< ></description><subject>Applied sciences</subject><subject>Bipolar transistors</subject><subject>Electric variables measurement</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Operational amplifiers</subject><subject>Power amplifiers</subject><subject>Power measurement</subject><subject>Power transistors</subject><subject>Radio frequency</subject><subject>Radiofrequency amplifiers</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Temperature measurement</subject><subject>Transistors</subject><subject>Tuned circuits</subject><issn>0018-9456</issn><issn>1557-9662</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNqFkM1LAzEQxYMoWKsHr55yEMHD1kyym-wepbQqFATR8xLjBFP2yySL-N-bukWPwoM5zJsfbx4h58AWAKy6gWoBSglRHZAZFIXKKin5IZkxBmVW5YU8JichbBljSuZqRjarBk30zuiGtqjD6LHFLtLe0viOdDt2Jrq-oxHbAb2Oab_b6Y4-renQf6Kn0esuuBB7f0qOrG4Cnu3nnLysV8_L-2zzePewvN1kRggVMxAcXxnPLWjEFMNaxa0VgAVWFt8MCKuNkNZUHGQOnJvcFGhLqYVArgsxJ1cTd_D9x4gh1q0LBptGd9iPoealAAWs_N8oZMlF0pxcT0bj-xA82nrwrtX-qwZW74qtIemn2OS93EN1SLXZ9L5x4fcgl1AW5S7kxWRziPiHmxjfxbmASw</recordid><startdate>19921001</startdate><enddate>19921001</enddate><creator>Cain, B.M.</creator><creator>Goud, P.A.</creator><creator>Englefield, C.G.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7SP</scope></search><sort><creationdate>19921001</creationdate><title>Electrical measurement of the junction temperature of an RF power transistor</title><author>Cain, B.M. ; Goud, P.A. ; Englefield, C.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-132eb024f1aee764ff72ff31e5e9fedc13fac36fc92164122c4c5ef86a33e2a53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Applied sciences</topic><topic>Bipolar transistors</topic><topic>Electric variables measurement</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Operational amplifiers</topic><topic>Power amplifiers</topic><topic>Power measurement</topic><topic>Power transistors</topic><topic>Radio frequency</topic><topic>Radiofrequency amplifiers</topic><topic>Semiconductor electronics. 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A two-step procedure, previously developed for DC operation, is extended to include the junction temperature measurement for an RF power transistor in a tuned amplifier circuit. The measurement technique is convenient, since it can be used with normal, packaged devices, and does not require a complex heat flow model or ambient temperature measurements.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/19.177339</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0018-9456 |
| ispartof | IEEE transactions on instrumentation and measurement, 1992-10, Vol.41 (5), p.663-665 |
| issn | 0018-9456 1557-9662 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_23682382 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Bipolar transistors Electric variables measurement Electronics Exact sciences and technology Operational amplifiers Power amplifiers Power measurement Power transistors Radio frequency Radiofrequency amplifiers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature measurement Transistors Tuned circuits |
| title | Electrical measurement of the junction temperature of an RF power transistor |
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