Front surface control of Cr redistribution and formation of stable Cr depletion channels in GaAs

Front surface control of Cr redistribution and formation of stable Cr depletion channels in GaAs

A technique has been investigated for creating sharply defined (near-surface) ’’square-well’’ Cr-depletion channels in GaAs with subsequent stability of Cr to anneal temperatures of 850 °C. Using 100-keV B+ implants into surface-ionized GaAs, followed by annealing (capless) at temperatures...

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Veröffentlicht in:Applied physics letters 1981-01, Vol.38 (7), p.559-561
Hauptverfasser: Magee, T. J., Ormond, R. D., Evans, C. A., Blattner, R. J., Malbon, R. M., Day, D. S., Sankaran, R.
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container_end_page 561
container_issue 7
container_start_page 559
container_title Applied physics letters
container_volume 38
creator Magee, T. J.
Ormond, R. D.
Evans, C. A.
Blattner, R. J.
Malbon, R. M.
Day, D. S.
Sankaran, R.
description A technique has been investigated for creating sharply defined (near-surface) ’’square-well’’ Cr-depletion channels in GaAs with subsequent stability of Cr to anneal temperatures of 850 °C. Using 100-keV B+ implants into surface-ionized GaAs, followed by annealing (capless) at temperatures
doi_str_mv 10.1063/1.92412
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title Front surface control of Cr redistribution and formation of stable Cr depletion channels in GaAs
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