Front surface control of Cr redistribution and formation of stable Cr depletion channels in GaAs
A technique has been investigated for creating sharply defined (near-surface) ’’square-well’’ Cr-depletion channels in GaAs with subsequent stability of Cr to anneal temperatures of 850 °C. Using 100-keV B+ implants into surface-ionized GaAs, followed by annealing (capless) at temperatures...
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| Veröffentlicht in: | Applied physics letters 1981-01, Vol.38 (7), p.559-561 |
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| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A technique has been investigated for creating sharply defined (near-surface) ’’square-well’’ Cr-depletion channels in GaAs with subsequent stability of Cr to anneal temperatures of 850 °C. Using 100-keV B+ implants into surface-ionized GaAs, followed by annealing (capless) at temperatures |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.92412 |