Effects of Co-depositing Oxygen on the Growth Morphology of (111) and (100) Al Single Crystal Faces in Thin Films

Correlation between the growth surface structure and the oxygen-to-aluminium flux ratio was found in vapour deposited Al films. Studies of the effect of co-depositing oxygen species on the growth surface structure were carried out in the case of epitaxially grown Al films (on NaCl, mica, and GaAs su...

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Veröffentlicht in:Vacuum 1981-10, Vol.33 (1-2), p.25-30
Hauptverfasser: Barna, P B, Reicha, F M, Barcza, G, Gosztola, L, Koltai, F
Format: Artikel
Sprache:eng
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Zusammenfassung:Correlation between the growth surface structure and the oxygen-to-aluminium flux ratio was found in vapour deposited Al films. Studies of the effect of co-depositing oxygen species on the growth surface structure were carried out in the case of epitaxially grown Al films (on NaCl, mica, and GaAs substrates) containing crystals of (111), (100), and (110) orientations. On (111) crystal faces bunches of growth steps decorated by pinning sites, dents, macro steps correlating to grain boundaries, and hillocks were developed. However, on (100) and (110) crystal faces only dents have been found. These results help to explain the correlation between the crystal face anisotropy in the surface micro-chemistry and anisotropy in the participation of oxygen species in the growth mechanism on the various crystal faces. Whiskers and "mushroom whiskers" were detected in Al films deposited at a high level of oxygen contaminaion on amorphous substrates at first. Their formation can be ascribed also to these phenomena. 18 ref.--AA
ISSN:0042-207X