Dependence of surface recombination velocity of p-type InSb on temperature and alpha particle bombardment
The temperature dependence of surface recombination velocity S of p-type InSb upon alpha particle bombardment is studied from photomagnetoelectric measurements between 16 and 80 K. Warming the specimen above 16 K we observe an increase of S followed by an abrupt fall of S at about 30–40 K. Further w...
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Veröffentlicht in: | Solid state communications 1981-01, Vol.37 (9), p.733-736 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The temperature dependence of surface recombination velocity
S of
p-type InSb upon alpha particle bombardment is studied from photomagnetoelectric measurements between 16 and 80 K. Warming the specimen above 16 K we observe an increase of
S followed by an abrupt fall of
S at about 30–40 K. Further warming produces a strong maximum of
S at about 100–120 K. Bombardment with alpha particles increases
S at all temperatures up to about 120 K. The whole behavior is explained on the basis of a model proposed by the authors in an earlier paper. |
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ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/0038-1098(81)91088-7 |