The measurement of stress during the deposition of thin films

The deflection of a small cantilever during the deposition of a surface layer on one side is conveniently and sensitively monitored by holographic interferometry. Stresses developing when silver was electroplated onto vapour-metallized semiconductor substrates have been measured using a sequence of...

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Veröffentlicht in:Surface technology 1979-01, Vol.8 (4), p.325-331
Hauptverfasser: Read, A.G., Farr, J.P.G., Sheppard, K.G.
Format: Artikel
Sprache:eng
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Zusammenfassung:The deflection of a small cantilever during the deposition of a surface layer on one side is conveniently and sensitively monitored by holographic interferometry. Stresses developing when silver was electroplated onto vapour-metallized semiconductor substrates have been measured using a sequence of lapsed-time holographic interferograms recorded on a single photographic plate. This multi-framing technique, involving screening of the reference beam, has some advantages compared with the real-time technique.
ISSN:0376-4583
DOI:10.1016/0376-4583(79)90032-3