The measurement of stress during the deposition of thin films
The deflection of a small cantilever during the deposition of a surface layer on one side is conveniently and sensitively monitored by holographic interferometry. Stresses developing when silver was electroplated onto vapour-metallized semiconductor substrates have been measured using a sequence of...
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Veröffentlicht in: | Surface technology 1979-01, Vol.8 (4), p.325-331 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The deflection of a small cantilever during the deposition of a surface layer on one side is conveniently and sensitively monitored by holographic interferometry. Stresses developing when silver was electroplated onto vapour-metallized semiconductor substrates have been measured using a sequence of lapsed-time holographic interferograms recorded on a single photographic plate. This multi-framing technique, involving screening of the reference beam, has some advantages compared with the real-time technique. |
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ISSN: | 0376-4583 |
DOI: | 10.1016/0376-4583(79)90032-3 |