Current Controlled LPE [Liquid Phase Epitaxial] Growth of In sub x Ga sub 1--x As on GaAs

The use of current controlled LPE to grow good quality In sub x Ga sub 1 sub --x As layers on (100) GaAs substrates is described. The system was designed so that with a const. furnace temp. of 750 deg C growth occurred primarily by electro-transport of solute atoms without convection and Peltier cooling effects. Growth rates of 0.11 to 1.1 mu m/min were achieved with c.d. of 2.5 to 30 A/cm sub 2 . Photoluminescence studies revealed emission peaks in the wavelength range 0.898 mu m < lambda < 0.912 mu m corresponding to 0.038 < x < 0.054. 17 ref.--R.E.