Conductivity and Hall mobility in GaSe single crystals
Hall mobility and resistivity measurements have been made on B-S grown GaSe single crystals perpendicular to the c-axis in the temperature range 200 K-350 K. Room temperature mobility varies from 1·3 × 10 −3 m 2 V −1 s −l to 1·6 × 10 −3 m 2 V −1 s −1 , while the room temperature resistivity is in...
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| Veröffentlicht in: | International journal of electronics 1981-09, Vol.51 (3), p.211-214 |
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| container_title | International journal of electronics |
| container_volume | 51 |
| creator | KHALID ANIS, MUHAMMAD MUHAMMAD NAZAR, FATEH |
| description | Hall mobility and resistivity measurements have been made on B-S grown GaSe single crystals perpendicular to the c-axis in the temperature range 200 K-350 K. Room temperature mobility varies from 1·3 × 10
−3
m
2
V
−1
s
−l
to 1·6 × 10
−3
m
2
V
−1
s
−1
, while the room temperature resistivity is in the range (1·8-6·4) Ωm. The mobility shows an inverse square dependence on temperature. Activation energy curves (log conductivity vs l/T) for different samples give acceptor levels at 0·35 ± 0·02eV. |
| doi_str_mv | 10.1080/00207218108901322 |
| format | Article |
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−3
m
2
V
−1
s
−l
to 1·6 × 10
−3
m
2
V
−1
s
−1
, while the room temperature resistivity is in the range (1·8-6·4) Ωm. The mobility shows an inverse square dependence on temperature. Activation energy curves (log conductivity vs l/T) for different samples give acceptor levels at 0·35 ± 0·02eV.</description><identifier>ISSN: 0020-7217</identifier><identifier>EISSN: 1362-3060</identifier><identifier>DOI: 10.1080/00207218108901322</identifier><language>eng</language><publisher>Taylor & Francis Group</publisher><ispartof>International journal of electronics, 1981-09, Vol.51 (3), p.211-214</ispartof><rights>Copyright Taylor & Francis Group, LLC 1981</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c393t-431dee55fa7023b14a5d77fe4d55c5a6e8c490f8d0a35018c9028bee968d223</citedby><cites>FETCH-LOGICAL-c393t-431dee55fa7023b14a5d77fe4d55c5a6e8c490f8d0a35018c9028bee968d223</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.tandfonline.com/doi/pdf/10.1080/00207218108901322$$EPDF$$P50$$Ginformaworld$$H</linktopdf><linktohtml>$$Uhttps://www.tandfonline.com/doi/full/10.1080/00207218108901322$$EHTML$$P50$$Ginformaworld$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,59646,60435</link.rule.ids></links><search><creatorcontrib>KHALID ANIS, MUHAMMAD</creatorcontrib><creatorcontrib>MUHAMMAD NAZAR, FATEH</creatorcontrib><title>Conductivity and Hall mobility in GaSe single crystals</title><title>International journal of electronics</title><description>Hall mobility and resistivity measurements have been made on B-S grown GaSe single crystals perpendicular to the c-axis in the temperature range 200 K-350 K. Room temperature mobility varies from 1·3 × 10
−3
m
2
V
−1
s
−l
to 1·6 × 10
−3
m
2
V
−1
s
−1
, while the room temperature resistivity is in the range (1·8-6·4) Ωm. The mobility shows an inverse square dependence on temperature. Activation energy curves (log conductivity vs l/T) for different samples give acceptor levels at 0·35 ± 0·02eV.</description><issn>0020-7217</issn><issn>1362-3060</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1981</creationdate><recordtype>article</recordtype><recordid>eNp1kD1PwzAQhi0EEqXwA9gysQXOvthJJBZUQYtUiaHslusPZOTExU5B-fekKlvF9OrunueGl5BbCvcUGngAYFAz2kxDCxQZOyMzioKVCALOyexwLyegviRXOX8CAApgMyIWsTd7PfhvP4yF6k2xUiEUXdz6cNj4vliqjS2y7z-CLXQa86BCviYXbgp785dzsnl5fl-syvXb8nXxtC41tjiUFVJjLedO1cBwSyvFTV07WxnONVfCNrpqwTUGFHKgjW6BNVtrW9EYxnBO7o5fdyl-7W0eZOeztiGo3sZ9lgwFRUQ-gfQI6hRzTtbJXfKdSqOkIA_9yJN-Jufx6PjexdSpn5iCkYMaQ0wuqV77LPF__RfaYWl9</recordid><startdate>19810901</startdate><enddate>19810901</enddate><creator>KHALID ANIS, MUHAMMAD</creator><creator>MUHAMMAD NAZAR, FATEH</creator><general>Taylor & Francis Group</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>19810901</creationdate><title>Conductivity and Hall mobility in GaSe single crystals</title><author>KHALID ANIS, MUHAMMAD ; MUHAMMAD NAZAR, FATEH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-431dee55fa7023b14a5d77fe4d55c5a6e8c490f8d0a35018c9028bee968d223</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1981</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KHALID ANIS, MUHAMMAD</creatorcontrib><creatorcontrib>MUHAMMAD NAZAR, FATEH</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>International journal of electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KHALID ANIS, MUHAMMAD</au><au>MUHAMMAD NAZAR, FATEH</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Conductivity and Hall mobility in GaSe single crystals</atitle><jtitle>International journal of electronics</jtitle><date>1981-09-01</date><risdate>1981</risdate><volume>51</volume><issue>3</issue><spage>211</spage><epage>214</epage><pages>211-214</pages><issn>0020-7217</issn><eissn>1362-3060</eissn><abstract>Hall mobility and resistivity measurements have been made on B-S grown GaSe single crystals perpendicular to the c-axis in the temperature range 200 K-350 K. Room temperature mobility varies from 1·3 × 10
−3
m
2
V
−1
s
−l
to 1·6 × 10
−3
m
2
V
−1
s
−1
, while the room temperature resistivity is in the range (1·8-6·4) Ωm. The mobility shows an inverse square dependence on temperature. Activation energy curves (log conductivity vs l/T) for different samples give acceptor levels at 0·35 ± 0·02eV.</abstract><pub>Taylor & Francis Group</pub><doi>10.1080/00207218108901322</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0020-7217 |
| ispartof | International journal of electronics, 1981-09, Vol.51 (3), p.211-214 |
| issn | 0020-7217 1362-3060 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_23613335 |
| source | Taylor & Francis Journals Complete |
| title | Conductivity and Hall mobility in GaSe single crystals |
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