Conductivity and Hall mobility in GaSe single crystals

Hall mobility and resistivity measurements have been made on B-S grown GaSe single crystals perpendicular to the c-axis in the temperature range 200 K-350 K. Room temperature mobility varies from 1·3 × 10 −3 m 2 V −1 s −l to 1·6 × 10 −3 m 2 V −1 s −1 , while the room temperature resistivity is in the range (1·8-6·4) Ωm. The mobility shows an inverse square dependence on temperature. Activation energy curves (log conductivity vs l/T) for different samples give acceptor levels at 0·35 ± 0·02eV.