The effects of hydrogen on the nitridation of silicon
It is believed that H sub 2 assists the removal of a reaction-inhibiting oxide film on the Si surface. The effect of H sub 2 on the Beta-phase forming process tends to be more marked than that on Alpha-phase reaction.
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| Veröffentlicht in: | Journal of materials science 1979-04, Vol.14 (4), p.1007-1008 |
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| Sprache: | eng |
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| container_end_page | 1008 |
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| container_issue | 4 |
| container_start_page | 1007 |
| container_title | Journal of materials science |
| container_volume | 14 |
| creator | Campos-Loriz, D Riley, F L |
| description | It is believed that H sub 2 assists the removal of a reaction-inhibiting oxide film on the Si surface. The effect of H sub 2 on the Beta-phase forming process tends to be more marked than that on Alpha-phase reaction. |
| doi_str_mv | 10.1007/BF00550738 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0022-2461 |
| ispartof | Journal of materials science, 1979-04, Vol.14 (4), p.1007-1008 |
| issn | 0022-2461 1573-4803 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_23612561 |
| source | Springer Online Journals Complete |
| title | The effects of hydrogen on the nitridation of silicon |
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