Comments on surface accumulation in laser-assisted doping
The accumulation of certain impurities at the surface of Si samples, observed after laser flash irradiations, is described in terms of an enhanced diffusion in the recrystallized silicon. Dopant atoms which diffuse along interstitial paths may be sweeped by a hot carrier wind “blowing” behind the re...
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| Veröffentlicht in: | Solid state communications 1981-01, Vol.38 (4), p.313-316 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The accumulation of certain impurities at the surface of Si samples, observed after laser flash irradiations, is described in terms of an enhanced diffusion in the recrystallized silicon. Dopant atoms which diffuse along interstitial paths may be sweeped by a hot carrier wind “blowing” behind the recrystallization front provided a threshold value of the carrier concentration is exceeded. |
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| ISSN: | 0038-1098 1879-2766 |
| DOI: | 10.1016/0038-1098(81)90469-5 |