Bulk and surface characterization of the silicon electrode

The properties of silicon as an electrode are investigated. Techniques for reproducible measurement of the doping level are described, techniques designed to avoid surface films associated with fluoride ions. A peak in the capacity/voltage curve that appears near the flatband voltage for both n- and p-type silicon is characterized in detail and shown to be associated with interface states between a surface oxide layer and the silicon. The possible chemical origin of the interface states when the electrode is in solution is discussed.