Self-aligned structure InGaAsP/InP DH lasers

Self-aligned structure InGaAsP/InP DH lasers

Self-aligned structure InGaAsP/InP DH lasers with emission wavelengths near 1.3 μm are studied. A cw threshold of about 100 mA is obtained in these lasers with cavity lengths of about 300 μm at a heat sink temperature of 25 °C. Light output increases linearly with current for outputs of 10 mW per fa...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1979-08, Vol.35 (3), p.232-234
Hauptverfasser: Nishi, H., Yano, M., Nishitani, Y., Akita, Y., Takusagawa, M.
Format: Artikel
Sprache:eng
Schlagworte:
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
ENGINEERING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT SINKS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER CAVITIES
LASERS
MEDIUM TEMPERATURE
NONMETALS
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES 420300 > Engineering-- Lasers-- (-1989)
SEMICONDUCTOR LASERS
WAVELENGTHS
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Zusammenfassung:Self-aligned structure InGaAsP/InP DH lasers with emission wavelengths near 1.3 μm are studied. A cw threshold of about 100 mA is obtained in these lasers with cavity lengths of about 300 μm at a heat sink temperature of 25 °C. Light output increases linearly with current for outputs of 10 mW per facet and no kinks appear. Fundamental-transverse and single-longitudinal mode oscillation, and stable operation of fundamental-transverse mode against injection current, are achieved. A cw operation up to 72 °C is obtained with a laser.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.91081