Second-order Raman scattering in II-VI semiconductors: Relative intensities and trends

Second-order Raman scattering in II-VI semiconductors: Relative intensities and trends

The second-order Raman spectra of ZnS, ZnSe and ZnTe are an anharmonic overlap shell model for their lattice dynamics. These calculations are fitted to the experiments and the corresponding nonlinear polarizabilities of Zn, sulfur, Se and Te are derived. The systematics of these parameters are discu...

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Veröffentlicht in:Physical review. B, Condensed matter Condensed matter, 1979-10, Vol.20 (8), p.3345-3350
Hauptverfasser: Schmidt, R. L., Kunc, K., Cardona, M., Bilz, H.
Format: Artikel
Sprache:eng
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Zusammenfassung:The second-order Raman spectra of ZnS, ZnSe and ZnTe are an anharmonic overlap shell model for their lattice dynamics. These calculations are fitted to the experiments and the corresponding nonlinear polarizabilities of Zn, sulfur, Se and Te are derived. The systematics of these parameters are discussed. As a byproduct the measured relative of the first-order scattering by TO phonons are interpreted with a microscopic-deformation-potential model.18 refs.--AA
ISSN:0163-1829
DOI:10.1103/PhysRevB.20.3345