Selective In Situ Vapor Etch and Growth of GaAs
Selective vapor etch of micron-size V-shaped and trapezoid grooves by {111}B surfaces in {001}-oriented substrates of GaAs is described. Te-, Ge-, Zn- and Cd-doped substrates showed that the etching process is sensitive to substrate doping, other conditions remaining the same. Redeposition of GaAs i...
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| Veröffentlicht in: | Journal of the Electrochemical Society 1979-07, Vol.126 (7), p.1241-1247 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Selective vapor etch of micron-size V-shaped and trapezoid grooves by {111}B surfaces in {001}-oriented substrates of GaAs is described. Te-, Ge-, Zn- and Cd-doped substrates showed that the etching process is sensitive to substrate doping, other conditions remaining the same. Redeposition of GaAs into the grooves is shown to result in good-quality material, flush with the substrate plane.21 refs.--AA |
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| ISSN: | 0013-4651 1945-7111 |
| DOI: | 10.1149/1.2129249 |