Solar-cell characteristics and interfacial chemistry of indium-tin-oxide/indium phosphide and indium-tin-oxide/gallium arsenide junctions

The preparation of indium-tin-oxide (ITO)/p-InP and ITO/p-GaAs solar cells via ion-beam deposition, rf sputtering, and magnetron sputtering of ITO onto single-crystal InP and GaAs substrates is described. The properties of these solar cells are strongly affected by the fabrication conditions and are...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1979-01, Vol.50 (5), p.3441-3446
Hauptverfasser:	Bachmann, K. J., Schreiber, H., Sinclair, W. R., Schmidt, P. H., Thiel, F. A., Spencer, E. G., Pasteur, G., Feldmann, W. L., SreeHarsha, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	140501 - Solar Energy Conversion- Photovoltaic Conversion ARSENIC COMPOUNDS ARSENIDES BEAMS CHALCOGENIDES CHEMICAL COATING CHEMICAL VAPOR DEPOSITION CRYSTALS DATA DEPOSITION DIRECT ENERGY CONVERTERS EFFICIENCY ELEMENTS GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM INDIUM COMPOUNDS INDIUM PHOSPHIDES INFORMATION ION BEAMS METALS MONOCRYSTALS OXIDES OXYGEN COMPOUNDS PHOSPHIDES PHOSPHORUS COMPOUNDS PHOTOELECTRIC CELLS PHOTOVOLTAIC CELLS PNICTIDES SOLAR CELLS SOLAR ENERGY SPUTTERING SUBSTRATES SURFACE COATING SURFACE PROPERTIES TIN COMPOUNDS TIN OXIDES
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Beschreibung
Zusammenfassung:	The preparation of indium-tin-oxide (ITO)/p-InP and ITO/p-GaAs solar cells via ion-beam deposition, rf sputtering, and magnetron sputtering of ITO onto single-crystal InP and GaAs substrates is described. The properties of these solar cells are strongly affected by the fabrication conditions and are related to chemical modifications of the junctions. The solar power conversion efficiencies at air mass 2 of ITO/p-GaAs and ITO/p-InP solar cells are ?5 and ?14.4%, respectively.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.326337