Order-disorder effects in GaAs(110)-oxygen interaction: A LEED-ups analysis

Order-disorder effects in GaAs(110)-oxygen interaction: A LEED-ups analysis

Cleaved GaAs(110) surfaces were exposed to oxygen (10 6 − 5 × 10 10 L) and analysed by LEED and UPS. Very important changes in the electron diffraction occur at 10 8 L and the analysis of the LEED pattern shows a bulk-like diffraction superposed on a high background, implying that a thin layer (1–3...

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Veröffentlicht in:Surface science 1979-08, Vol.87 (2), p.325-332
Hauptverfasser: Kahn, A., Kanani, D., Mark, P., Chye, P.W., Su, C.Y., Lindau, I., Spicer, W.E.
Format: Artikel
Sprache:eng
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Zusammenfassung:Cleaved GaAs(110) surfaces were exposed to oxygen (10 6 − 5 × 10 10 L) and analysed by LEED and UPS. Very important changes in the electron diffraction occur at 10 8 L and the analysis of the LEED pattern shows a bulk-like diffraction superposed on a high background, implying that a thin layer (1–3 Å) disordered by the oxidation covers the GaAs lattice relaxted to its bulk structure.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(79)90532-6