New infra-red absorption bands in hydrogen-implanted silicon

New vibrational modes of silicon-hydrogen complexes in the stretching (∼2000 cm −1), bending (∼900 cm −1 and wagging (∼600 cm −1 regions are resolved in hydrogen-implanted silicon. Further detailed studies are required to indentity hydrogen-associated bands corresponding to SiH or SiH n groupings....

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Veröffentlicht in:Physics letters. A 1979-07, Vol.72 (4), p.381-383
Hauptverfasser: Mukashev, B.N., Nussupov, K.H., Tamendarov, M.F.
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container_title Physics letters. A
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creator Mukashev, B.N.
Nussupov, K.H.
Tamendarov, M.F.
description New vibrational modes of silicon-hydrogen complexes in the stretching (∼2000 cm −1), bending (∼900 cm −1 and wagging (∼600 cm −1 regions are resolved in hydrogen-implanted silicon. Further detailed studies are required to indentity hydrogen-associated bands corresponding to SiH or SiH n groupings.
doi_str_mv 10.1016/0375-9601(79)90503-6
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title New infra-red absorption bands in hydrogen-implanted silicon
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