New infra-red absorption bands in hydrogen-implanted silicon
New vibrational modes of silicon-hydrogen complexes in the stretching (∼2000 cm −1), bending (∼900 cm −1 and wagging (∼600 cm −1 regions are resolved in hydrogen-implanted silicon. Further detailed studies are required to indentity hydrogen-associated bands corresponding to SiH or SiH n groupings....
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| Veröffentlicht in: | Physics letters. A 1979-07, Vol.72 (4), p.381-383 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | New vibrational modes of silicon-hydrogen complexes in the stretching (∼2000 cm
−1), bending (∼900 cm
−1 and wagging (∼600 cm
−1 regions are resolved in hydrogen-implanted silicon. Further detailed studies are required to indentity hydrogen-associated bands corresponding to SiH or SiH
n
groupings. |
|---|---|
| ISSN: | 0375-9601 1873-2429 |
| DOI: | 10.1016/0375-9601(79)90503-6 |