Properties of the Mo-CuInSe2 interface

Properties of the Mo-CuInSe2 interface

Mo has been suggested and used as an ohmic back contact for CdS/p-CuInSe2 solar cells. The Mo- p-CuInSe2 interface has been studied for both polycrystalline and single- crystal CuInSe2, using electron beam induced current and capacitance-voltage techniques. The interface is found to form a Schottky...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1982-06, Vol.40 (11), p.995-997
Hauptverfasser: Russell, P. E., Jamjoum, O., Ahrenkiel, R. K., Kazmerski, L. L., Mickelsen, R. A., Chen, W. S.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Mo has been suggested and used as an ohmic back contact for CdS/p-CuInSe2 solar cells. The Mo- p-CuInSe2 interface has been studied for both polycrystalline and single- crystal CuInSe2, using electron beam induced current and capacitance-voltage techniques. The interface is found to form a Schottky barrier, thereby limiting the attainable voltage of a solar cell with Mo back contact. Au is the only known ohmic contact to p-CuInSe2.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.92955