Neutron diffraction, infrared, and raman scattering investigations of the layered GaSxSe1−x system
Single crystals of layered GaSxSe1−x (0 ≦ × ≦ 1) mixed system are grown using Bridgman technique. The identification of pure GaSe polytype is made by help of neutron diffraction, long‐wavelength infrared, and Raman scattering spectroscopy. It is shown that the system investigated is characterized by...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1979-06, Vol.53 (2), p.549-555 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Single crystals of layered GaSxSe1−x (0 ≦ × ≦ 1) mixed system are grown using Bridgman technique. The identification of pure GaSe polytype is made by help of neutron diffraction, long‐wavelength infrared, and Raman scattering spectroscopy. It is shown that the system investigated is characterized by an unusual one‐ and two‐mode behaviour at the same time. The region of transformation from ϵ‐GaSe to GaS in GaSxSe1−x systems is discussed taking into account the results of neutron diffraction, infrared, and Raman investigations.
[Russian Text Ignored]. |
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| ISSN: | 0031-8965 1521-396X |
| DOI: | 10.1002/pssa.2210530218 |