On Redistribution of Boron during Thermal Oxidation of Silicon

Numerical and analytical methods for the calculation of redistribution of B during thermal oxidation are reviewed. An approx. analytic two-dimensional diffusion model is developed which is based on a modification of the approach used by Huang and Welliver. Accuracy of the analytic model one dimension is examined over a wide range of processing conditions using exact numerical simulation as a benchmark. The new analytic model is effectively used to simulate the channel and channel stop profiles of an n-MOS technology and measured results are shown.17 refs.--AA