Ion-implanted laser-annealed GaAs solar cells

Conversion efficiencies up to 12% at AM1 have been obtained for ion-implanted laser-annealed (IILA) GaAs solar cells utilizing a shallow-homojunction n+/p/p+ structure without a GaAlAs window. The n+ layer was formed by Se+-ion implantation into the p layer, which was grown epitaxially by chemical v...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1979-06, Vol.34 (11), p.780-782
Hauptverfasser:	Fan, J C C, Chapman, R L, Donnelly, J P, Turner, G W, Bozler, C O
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM COMPOUNDS ANNEALING ANTIREFLECTION COATINGS ARSENIC COMPOUNDS ARSENIDES ATOMIC IONS CHARGED PARTICLES CHEMICAL COATING CHEMICAL REACTIONS CHEMICAL VAPOR DEPOSITION COATINGS CONVERSION DEPOSITION DIRECT ENERGY CONVERTERS EFFICIENCY ELECTRODEPOSITION ELECTROLYSIS ELECTROMAGNETIC RADIATION ELECTROPLATING ENERGY CONVERSION GALLIUM ARSENIDES GALLIUM COMPOUNDS GARNETS HEAT TREATMENTS ION IMPLANTATION IONS JUNCTIONS LASER RADIATION LASERS LYSIS MINERALS NEODYMIUM LASERS OXIDATION OXYGEN COMPOUNDS PHOTOELECTRIC CELLS PHOTOVOLTAIC CELLS PLATING PNICTIDES RADIATIONS SELENIUM IONS SILICATES SILICON COMPOUNDS SOLAR CELLS SOLAR ENERGY SOLID STATE LASERS SUBSTRATES SURFACE COATING TRANSITION ELEMENT COMPOUNDS 140501 > Solar Energy Conversion-- Photovoltaic Conversion YTTRIUM COMPOUNDS
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Zusammenfassung:	Conversion efficiencies up to 12% at AM1 have been obtained for ion-implanted laser-annealed (IILA) GaAs solar cells utilizing a shallow-homojunction n+/p/p+ structure without a GaAlAs window. The n+ layer was formed by Se+-ion implantation into the p layer, which was grown epitaxially by chemical vapor deposition on a single-crystal p+ substrate. The implanted layer was annealed, without encapsulation, by scanning with a cw Nd : YAG laser. Cell metallization was performed by electroplating, and an antireflection coating was formed by anodic oxidation of the n+ layer.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.90671