Electronic properties of Th3As4U3As4 solid solutions
(ThxU1-x)3As4 solid solutions were obtained in range 1 > = x > = 0.85 by the modified Van Arkel method. Their resistivity, thermopower and Hall constant were determiend at temperatures 4.2--700 deg K. The condition of impurity band formation, its merging with the conduction band, as well as lo...
Gespeichert in:
Veröffentlicht in: | Solid state communications 1979-12, Vol.32 (11), p.1119-1123 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!