Electronic properties of Th3As4U3As4 solid solutions
(ThxU1-x)3As4 solid solutions were obtained in range 1 > = x > = 0.85 by the modified Van Arkel method. Their resistivity, thermopower and Hall constant were determiend at temperatures 4.2--700 deg K. The condition of impurity band formation, its merging with the conduction band, as well as lo...
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| Veröffentlicht in: | Solid state communications 1979-12, Vol.32 (11), p.1119-1123 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | (ThxU1-x)3As4 solid solutions were obtained in range 1 > = x > = 0.85 by the modified Van Arkel method. Their resistivity, thermopower and Hall constant were determiend at temperatures 4.2--700 deg K. The condition of impurity band formation, its merging with the conduction band, as well as location of the 5f-electron states are discussed. 15 ref.--AA |
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| ISSN: | 0038-1098 |
| DOI: | 10.1016/0038-1098(79)90844-5 |