Measurement of range distributions of zinc and nitrogen ions in multiple-layer substrates with the secondary ion microprobe

Zn and N ions are implanted into SiO2-GaAs1-xPx SiO2-Si3N4 multiple-layers with energies between 50 and keV at room temperature. The range distributions are measured with the secondary ion microprobe. At the interface a concentration step can be observed. The height of this concentration step corresponds to the ratio of the specific energy losses N(Se+Sn) in the two From the results predictions are possible on the masking effect of and Si3N4 layers in Zn and N implantations. 10 ref.--AA