Minority‐Carrier Lifetime: Correlation with IC Process Parameters

The recombination lifetime for more than 200 Czochralski, 3 in. dia. < 100 > , 11-15 -cm p-type Si slices has been determined the surface photovoltage technique. These slices were subsequently fabricated into MOS ring-dot capacitors for determination of the generation lifetime the C--t technique. The influence of several process parameters the temp. (900-1100 deg C) and ambient (O, steam, HCl) of oxidation and the thermal history are correlated with the material generation lifetime. Significant improvement in generation lifetime was achieved by the use of back-surface P gettering. Room-temp. generation lifetime > 1ms have been obtained in the case of a 900 deg C gate oxidation temp.37 refs.--AA