Electrical and optical properties of TlInSe2 single crystals

A note. TlInSe2 was synthesized and its energy structure studied by photoconductivity measurements, electrical measurements at 290-700 deg K, and optical measurements at 300 deg K, for a crystal thickness of 40-200 mu m. The photoconductivity peak at approx = 1.5eV, the temp. dependence of electrical conductivity, and the infrared absorption, indicate that the absorption edge is formed by direct and indirect transitions in the crystal; energies corresponding to them are in good agreement with the width of the forbidden gap. 11 ref.--R.D.P.