Amorphous silicon p - i - n solar cells fabricated by reactive sputtering

Amorphous silicon p - i - n solar cells fabricated by reactive sputtering

We report, for the first time, the fabrication of indium-tin-oxide p-i-n amorphous silicon solar cells by the method of reactive sputtering. These solar cells exhibit power conversion efficiency of 4.0% under AM1 illumination. The junction characteristics of these solar cells are discussed.

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Bibliographische Detailangaben
Veröffentlicht in:Appl. Phys. Lett.; (United States) 1982-03, Vol.40 (6), p.515-517
Hauptverfasser: Moustakas, T. D., Friedman, R.
Format: Artikel
Sprache:eng
Schlagworte:
AMORPHOUS STATE
CHEMICAL REACTIONS
DATA
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FABRICATION
INFORMATION
JUNCTIONS
MATERIALS
N-TYPE CONDUCTORS
NUMERICAL DATA
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR ENERGY
SOLAR EQUIPMENT 140501 > Solar Energy Conversion-- Photovoltaic Conversion
SPUTTERING
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Beschreibung
Zusammenfassung:We report, for the first time, the fabrication of indium-tin-oxide p-i-n amorphous silicon solar cells by the method of reactive sputtering. These solar cells exhibit power conversion efficiency of 4.0% under AM1 illumination. The junction characteristics of these solar cells are discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.93162