Mobility and carrier concentration profiles of P super(+) ion-implanted, isothermally annealed silicon crystals

Mobility and carrier concentration profiles of P super(+) ion-implanted, isothermally annealed silicon crystals

Experimental data of carrier mobility and carrier concentration profiles in depth from the surface of silicon wafers implanted with 50 keV P super(+) ions of various doses, isothermally annealed at 480 degree C, are reported. Generation and annihilation of mobility controlling defects and carrier tr...

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Veröffentlicht in:Journal of applied physics 1982-01, Vol.53 (1), p.774-776
Hauptverfasser: Mitsuishi, T, Sasaki, Y, van Thieu, H, Yoshihiro, N
Format: Artikel
Sprache:eng
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Zusammenfassung:Experimental data of carrier mobility and carrier concentration profiles in depth from the surface of silicon wafers implanted with 50 keV P super(+) ions of various doses, isothermally annealed at 480 degree C, are reported. Generation and annihilation of mobility controlling defects and carrier trapping centers are discussed with these data. A comment on the carrier recovery of heavily dosed specimens is given.
ISSN:0021-8979