Magnetoreflection studies of ion implanted bismuth

Magnetoreflection studies of ion implanted bismuth

The effect of the implantation of Sb ions on the electronic structure of the semimetal bismuth is studied by the magnetoreflection technique. The results show long electronic mean free paths and large implantation-induced increases in the band overlap and L-point band gap. These effects are opposite...

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Veröffentlicht in:Solid state communications 1982-01, Vol.43 (4), p.233-237
Hauptverfasser: Nicolini, C., Chieu, T.C., Dresselhaus, G., Dresselhaus, M.S.
Format: Artikel
Sprache:eng
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Zusammenfassung:The effect of the implantation of Sb ions on the electronic structure of the semimetal bismuth is studied by the magnetoreflection technique. The results show long electronic mean free paths and large implantation-induced increases in the band overlap and L-point band gap. These effects are opposite to those observed for Bi chemically doped with Sb.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(82)90082-5