Efficient shallow-homojunction GaAs solar cells by molecular beam epitaxy

Conversion efficiencies up to 16% at AM1 have been obtained for molecular beam epitaxy (MBE) GaAs solar cells utilizing a shallow-homojunction n+/p/p+ structure without a GaAlAs window. The n+, p, and p+ GaAs layers were all grown by MBE on single-crystal p+ GaAs substrates. Cell metallization was p...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1979-11, Vol.35 (10), p.804-806
Hauptverfasser:	Fan, John C. C., Calawa, A. R., Chapman, Ralph L., Turner, George W.
Format:	Artikel
Sprache:	eng
Schlagworte:	ANTIREFLECTION COATINGS ARSENIC COMPOUNDS ARSENIDES BEAMS CHEMICAL REACTIONS COATINGS CRYSTALS DEPOSITION DIRECT ENERGY CONVERTERS EFFICIENCY ELECTRODEPOSITION ELECTROLYSIS ELECTROPLATING EPITAXY FABRICATION GALLIUM ARSENIDE SOLAR CELLS GALLIUM ARSENIDES GALLIUM COMPOUNDS JUNCTIONS LAYERS LYSIS MOLECULAR BEAMS MONOCRYSTALS N-TYPE CONDUCTORS OXIDATION P-TYPE CONDUCTORS PHOTOELECTRIC CELLS PHOTOVOLTAIC CELLS PLATING PNICTIDES SEMICONDUCTOR MATERIALS SOLAR CELLS SOLAR ENERGY SURFACE COATING 140501 > Solar Energy Conversion-- Photovoltaic Conversion
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Zusammenfassung:	Conversion efficiencies up to 16% at AM1 have been obtained for molecular beam epitaxy (MBE) GaAs solar cells utilizing a shallow-homojunction n+/p/p+ structure without a GaAlAs window. The n+, p, and p+ GaAs layers were all grown by MBE on single-crystal p+ GaAs substrates. Cell metallization was performed by electroplating, and an antireflection coating was formed by anodic oxidation of the n+ layer. These cells are the first efficient MBE solar cells of any type to be reported.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.90943