Lattice structure in Ni-Si coevaporated films
Polycrystalline NiSi 2 films were formed using dual electron gun coevaporation in a UHV station. The films were deposited onto randomly oriented sapphire substrates. Ni-Si atomic ratios varied along the length of substrates from 29 to 44 at% Ni. X-ray analysis suggests that films containing less tha...
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| Veröffentlicht in: | Journal of crystal growth 1982-01, Vol.58 (2), p.460-462 |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Polycrystalline NiSi
2 films were formed using dual electron gun coevaporation in a UHV station. The films were deposited onto randomly oriented sapphire substrates. Ni-Si atomic ratios varied along the length of substrates from 29 to 44 at% Ni. X-ray analysis suggests that films containing less than 33.3 at% Ni have Si in a single phase metastable CaF
2 structure, while a two-phase material is formed for films with greater than 33.3 at% Ni. |
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| ISSN: | 0022-0248 1873-5002 |
| DOI: | 10.1016/0022-0248(82)90296-2 |