Degradation of Ga1--xAlxAs Visible Diode Lasers

Degradation of Ga1--xAlxAs Visible Diode Lasers

It is shown that Ga1--xAlxAs visible lasers degrade faster at shorter lasing wavelengths. The degradation in the wavelength region < 730 nm can mainly be attributed to the rapid formation of macroscopic defects in the active region. A notable improvement in life is obtained for these shorter wave...

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Veröffentlicht in:Applied physics letters 1979-01, Vol.35 (12), p.928-930
1. Verfasser: Kajimura, T
Format: Artikel
Sprache:eng
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Zusammenfassung:It is shown that Ga1--xAlxAs visible lasers degrade faster at shorter lasing wavelengths. The degradation in the wavelength region < 730 nm can mainly be attributed to the rapid formation of macroscopic defects in the active region. A notable improvement in life is obtained for these shorter wavelength lasers by Te-doping of the active layer. On the other hand, degradation at > 740 nm results from enhanced facet oxidation due to high AlAs mole fractions in the layers. Facet coatings using SiO2 films effectively suppress facet oxidation. As a result, room-temp. extrapolated lives > 10 000 h are achieved in the wavelength region > 740 nm.10 refs.--AA
ISSN:0003-6951
DOI:10.1063/1.91008